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WMSC010H12B1P6T MOSFET MOD.100A@25 C 1200V SILICON CARBIDE MOSFET

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Product Code : o093023
: T504071
161.3172 USD + VAT
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WMSC010H12B1P6T MOSFET MOD.100A@25 C 1200V SILICON CARBIDE MOSFET
161.3172 USD + VAT
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WMSC010H12B1P6T MOSFET MOD.100A@25 C 1200V SILICON CARBIDE MOSFET


WMSC010H12B1P6T MOSFET MOD.100A@25 C 1200V SILICON CARBIDE MOSFET Description


WMSC010H12B1P6T MOSFET MOD.100A@25 C 1200V SILICON CARBIDE MOSFET The WMSC010H12B1P6T, manufactured by WEEN SEMICONDUCTORS, is a high-performance module MOSFET designed for mosfet mod.100a@25 c 1200v silicon carbide mosfet. It provides excellent performance and reliability for high-power applications. The MOSFET supports a current rating of 121A and a voltage rating of 1.2kV, with a low on-resistance of 10m Ohms ensuring efficient operation. It can handle a power dissipation of up to 219W, making it ideal for demanding environments. The reverse recovery time is N/A, allowing for fast switching. Operating within a temperature range of -40°C~+150°C, it offers robust performance across various conditions. As a rohs-compliant product, it meets strict environmental standards. Packaged in box format, it ensures secure handling and storage. With its advanced features and durable design, the WMSC010H12B1P6T is an excellent choice for professionals seeking high-quality module MOSFET solutions.

WMSC010H12B1P6T MOSFET MOD.100A@25 C 1200V SILICON CARBIDE MOSFET Technical Specifications


  • Manufacturer: WEEN SEMICONDUCTORS
  • MountingType: Chassis
  • Package  /Case: WeEnPACK-B1
  • Technology: Silicon Carbide (SiC)
  • FetType: N-CH
  • Current(25°C): 121A
  • Voltage: 1.2kV
  • RdsOn: 10m Ohms
  • PowerDissipation: 219W
  • Trr:
  • Configuration: Dual
  • Applications:
  • OperatingTemperature: -40°C~+150°C
  • Rohs: ROHS
  • Packaging: BOX

  • You can click for product datasheet.

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