MCNA650PD2200CB THYRISTOR DIODE MOD.DUAL 650A 2200V COMPACK CHASSI

MCNA650PD2200CB THYRISTOR DIODE MOD.DUAL 650A 2200V COMPACK CHASSI Description

MCNA650PD2200CB THYRISTOR DIODE MOD.DUAL 650A 2200V COMPACK CHASSI The MCNA650PD2200CB, manufactured by IXYS, is a high-performance module designed for thyristor diode mod.dual 650a 2200v compack chassi. It offers exceptional reliability and efficiency in high-power applications. The module features a forward voltage drop of 1.19V, ensuring minimal power loss. It can handle a power dissipation of 2.555kW, making it suitable for demanding environments. The reverse recovery time is N/A, and the turn-off time is 350us, allowing for efficient switching. Configured as a dual module, it provides versatility for various applications. The device operates within a temperature range of -40°C~+125°C, ensuring robust performance in diverse conditions. As a rohs-compliant product, it meets stringent environmental and safety standards. Packaged in box format, it ensures secure handling and storage. With its advanced features and durable design, the MCNA650PD2200CB is an excellent choice for professionals seeking reliable module diode and thyristor solutions.

MCNA650PD2200CB THYRISTOR DIODE MOD.DUAL 650A 2200V COMPACK CHASSI Technical Specifications

• Manufacturer: IXYS
• Series: Thyristor Phase Control
• MountingType: Chassis
• Package/Case: ComPack
• CurrentOnState(ITav): 650A (2x650A)
• RMSOnState(ITrms): 1.02kA (2x1.02kA)
• CurrentTemperature(IC): 85°C
• CurrentHold(IH): 300mA
• Voltage(VRRM): 2.2kV
• GateTrigger(Vgt): 2V
• ForwardDrop(VT): 1.19V
• PowerDissipation: 2.555kW
• Trr:
• Tq: 350us
• Configuration: Dual
• Applications:
• JunctionTemperature(Tj):
• OperatingTemperature: -40°C~+125°C
• Rohs: ROHS
• Packaging: BOX

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