IXTN170P10P MOSFET MOD.170A 100V P-CH SOT227B POLARP CHASSIS

IXTN170P10P MOSFET MOD.170A 100V P-CH SOT227B POLARP CHASSIS Description

IXTN170P10P MOSFET MOD.170A 100V P-CH SOT227B POLARP CHASSIS The IXTN170P10P, manufactured by IXYS, is a high-performance module MOSFET designed for mosfet mod.170a 100v p-ch sot227b polarp chassis. It provides excellent performance and reliability for high-power applications. The MOSFET supports a current rating of 170A and a voltage rating of 100V, with a low on-resistance of 14m Ohms ensuring efficient operation. It can handle a power dissipation of up to 890W, making it ideal for demanding environments. The reverse recovery time is 176ns, allowing for fast switching. Operating within a temperature range of -55°C~+150°C, it offers robust performance across various conditions. As a rohs-compliant product, it meets strict environmental standards. Packaged in tube format, it ensures secure handling and storage. With its advanced features and durable design, the IXTN170P10P is an excellent choice for professionals seeking high-quality module MOSFET solutions.

IXTN170P10P MOSFET MOD.170A 100V P-CH SOT227B POLARP CHASSIS Technical Specifications

• Manufacturer: IXYS
• MountingType: Chassis
• Package  /Case: SOT227B (Minibloc)
• Technology: PolarP
• FetType: P-CH
• Current(25°C): 170A
• Voltage: 100V
• RdsOn: 14m Ohms
• PowerDissipation: 890W
• Trr: 176ns
• Configuration: Single
• Applications:
• OperatingTemperature: -55°C~+150°C
• Rohs: ROHS
• Packaging: TUBE

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