IXFN80N50P MOSFET MOD.66A 500V N-CH SOT227B POLARHV CHASSIS

IXFN80N50P MOSFET MOD.66A 500V N-CH SOT227B POLARHV CHASSIS Description

IXFN80N50P MOSFET MOD.66A 500V N-CH SOT227B POLARHV CHASSIS The IXFN80N50P, manufactured by IXYS, is a high-performance module MOSFET designed for mosfet mod.66a 500v n-ch sot227b polarhv chassis. It provides excellent performance and reliability for high-power applications. The MOSFET supports a current rating of 66A and a voltage rating of 500V, with a low on-resistance of 65m Ohms ensuring efficient operation. It can handle a power dissipation of up to 700W, making it ideal for demanding environments. The reverse recovery time is 200ns, allowing for fast switching. Operating within a temperature range of -55°C~+150°C, it offers robust performance across various conditions. As a rohs-compliant product, it meets strict environmental standards. Packaged in tube format, it ensures secure handling and storage. With its advanced features and durable design, the IXFN80N50P is an excellent choice for professionals seeking high-quality module MOSFET solutions.

IXFN80N50P MOSFET MOD.66A 500V N-CH SOT227B POLARHV CHASSIS Technical Specifications

• Manufacturer: IXYS
• MountingType: Chassis
• Package  /Case: SOT227B (Minibloc)
• Technology: PolarHV
• FetType: N-CH
• Current(25°C): 66A
• Voltage: 500V
• RdsOn: 65m Ohms
• PowerDissipation: 700W
• Trr: 200ns
• Configuration: Single
• Applications:
• OperatingTemperature: -55°C~+150°C
• Rohs: ROHS
• Packaging: TUBE

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