IXFN66N85X MOSFET MOD.65A 850V N-CH SOT227B ULTRA JUNCTION

IXFN66N85X MOSFET MOD.65A 850V N-CH SOT227B ULTRA JUNCTION Description

IXFN66N85X MOSFET MOD.65A 850V N-CH SOT227B ULTRA JUNCTION The IXFN66N85X, manufactured by IXYS, is a high-performance module MOSFET designed for mosfet mod.65a 850v n-ch sot227b ultra junction. It provides excellent performance and reliability for high-power applications. The MOSFET supports a current rating of 65A and a voltage rating of 850V, with a low on-resistance of 65m Ohms ensuring efficient operation. It can handle a power dissipation of up to 830W, making it ideal for demanding environments. The reverse recovery time is 250ns, allowing for fast switching. Operating within a temperature range of -55°C~+150°C, it offers robust performance across various conditions. As a rohs-compliant product, it meets strict environmental standards. Packaged in tube format, it ensures secure handling and storage. With its advanced features and durable design, the IXFN66N85X is an excellent choice for professionals seeking high-quality module MOSFET solutions.

IXFN66N85X MOSFET MOD.65A 850V N-CH SOT227B ULTRA JUNCTION Technical Specifications

• Manufacturer: IXYS
• MountingType: Chassis
• Package  /Case: SOT227B (Minibloc)
• Technology: HiPerFET
• FetType: N-CH
• Current(25°C): 65A
• Voltage: 850V
• RdsOn: 65m Ohms
• PowerDissipation: 830W
• Trr: 250ns
• Configuration: Single
• Applications:
• OperatingTemperature: -55°C~+150°C
• Rohs: ROHS
• Packaging: TUBE

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