IXFN52N100X MOSFET MOD.52A 1000V N-CH SOT227B ULTRA JUNCTION

IXFN52N100X MOSFET MOD.52A 1000V N-CH SOT227B ULTRA JUNCTION Description

IXFN52N100X MOSFET MOD.52A 1000V N-CH SOT227B ULTRA JUNCTION The IXFN52N100X, manufactured by IXYS, is a high-performance module MOSFET designed for mosfet mod.52a 1000v n-ch sot227b ultra junction. It provides excellent performance and reliability for high-power applications. The MOSFET supports a current rating of 44A and a voltage rating of 1kV, with a low on-resistance of 125m Ohms ensuring efficient operation. It can handle a power dissipation of up to 830W, making it ideal for demanding environments. The reverse recovery time is 260ns, allowing for fast switching. Operating within a temperature range of -55°C~+150°C, it offers robust performance across various conditions. As a rohs-compliant product, it meets strict environmental standards. Packaged in tube format, it ensures secure handling and storage. With its advanced features and durable design, the IXFN52N100X is an excellent choice for professionals seeking high-quality module MOSFET solutions.

IXFN52N100X MOSFET MOD.52A 1000V N-CH SOT227B ULTRA JUNCTION Technical Specifications

• Manufacturer: IXYS
• MountingType: Chassis
• Package  /Case: SOT227B (Minibloc)
• Technology: HiPerFET
• FetType: N-CH
• Current(25°C): 44A
• Voltage: 1kV
• RdsOn: 125m Ohms
• PowerDissipation: 830W
• Trr: 260ns
• Configuration: Single
• Applications:
• OperatingTemperature: -55°C~+150°C
• Rohs: ROHS
• Packaging: TUBE

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