IXFN32N120P MOSFET MOD.32A 1200V N-CH SOT227B HIPERFET CHASSIS

IXFN32N120P MOSFET MOD.32A 1200V N-CH SOT227B HIPERFET CHASSIS Description

IXFN32N120P MOSFET MOD.32A 1200V N-CH SOT227B HIPERFET CHASSIS The IXFN32N120P, manufactured by IXYS, is a high-performance module MOSFET designed for mosfet mod.32a 1200v n-ch sot227b hiperfet chassis. It provides excellent performance and reliability for high-power applications. The MOSFET supports a current rating of 32A and a voltage rating of 1.2kV, with a low on-resistance of 310m Ohms ensuring efficient operation. It can handle a power dissipation of up to 1kW, making it ideal for demanding environments. The reverse recovery time is 300ns, allowing for fast switching. Operating within a temperature range of -55°C~+150°C, it offers robust performance across various conditions. As a rohs-compliant product, it meets strict environmental standards. Packaged in tube format, it ensures secure handling and storage. With its advanced features and durable design, the IXFN32N120P is an excellent choice for professionals seeking high-quality module MOSFET solutions.

IXFN32N120P MOSFET MOD.32A 1200V N-CH SOT227B HIPERFET CHASSIS Technical Specifications

• Manufacturer: IXYS
• MountingType: Chassis
• Package  /Case: SOT227B (Minibloc)
• Technology: HiPerFET
• FetType: N-CH
• Current(25°C): 32A
• Voltage: 1.2kV
• RdsOn: 310m Ohms
• PowerDissipation: 1kW
• Trr: 300ns
• Configuration: Single
• Applications:
• OperatingTemperature: -55°C~+150°C
• Rohs: ROHS
• Packaging: TUBE

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