IXFN320N17T2 MOSFET MOD.320A 170V N-CH SOT227B GIGAMOS CHASSIS

IXFN320N17T2 MOSFET MOD.320A 170V N-CH SOT227B GIGAMOS CHASSIS Description

IXFN320N17T2 MOSFET MOD.320A 170V N-CH SOT227B GIGAMOS CHASSIS The IXFN320N17T2, manufactured by IXYS, is a high-performance module MOSFET designed for mosfet mod.320a 170v n-ch sot227b gigamos chassis. It provides excellent performance and reliability for high-power applications. The MOSFET supports a current rating of 320A and a voltage rating of 170V, with a low on-resistance of 5.2m Ohms ensuring efficient operation. It can handle a power dissipation of up to 1.07kW, making it ideal for demanding environments. The reverse recovery time is 150ns, allowing for fast switching. Operating within a temperature range of -55°C~+175°C, it offers robust performance across various conditions. As a rohs-compliant product, it meets strict environmental standards. Packaged in tube format, it ensures secure handling and storage. With its advanced features and durable design, the IXFN320N17T2 is an excellent choice for professionals seeking high-quality module MOSFET solutions.

IXFN320N17T2 MOSFET MOD.320A 170V N-CH SOT227B GIGAMOS CHASSIS Technical Specifications

• Manufacturer: IXYS
• MountingType: Chassis
• Package  /Case: SOT227B (Minibloc)
• Technology: GigaMOS
• FetType: N-CH
• Current(25°C): 320A
• Voltage: 170V
• RdsOn: 5.2m Ohms
• PowerDissipation: 1.07kW
• Trr: 150ns
• Configuration: Single
• Applications:
• OperatingTemperature: -55°C~+175°C
• Rohs: ROHS
• Packaging: TUBE

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