IXFN27N120SK MOSFET SIL.CARB.DIS.1200V N-CH SOT227B

IXFN27N120SK MOSFET SIL.CARB.DIS.1200V N-CH SOT227B Description

IXFN27N120SK MOSFET SIL.CARB.DIS.1200V N-CH SOT227B The IXFN27N120SK, manufactured by IXYS, is a high-performance module MOSFET designed for mosfet sil.carb.dis.1200v n-ch sot227b. It provides excellent performance and reliability for high-power applications. The MOSFET supports a current rating of N/A and a voltage rating of 1.2kV, with a low on-resistance of N/A ensuring efficient operation. It can handle a power dissipation of up to N/A, making it ideal for demanding environments. The reverse recovery time is N/A, allowing for fast switching. Operating within a temperature range of N/A, it offers robust performance across various conditions. As a rohs-compliant product, it meets strict environmental standards. Packaged in tube format, it ensures secure handling and storage. With its advanced features and durable design, the IXFN27N120SK is an excellent choice for professionals seeking high-quality module MOSFET solutions.

IXFN27N120SK MOSFET SIL.CARB.DIS.1200V N-CH SOT227B Technical Specifications

• Manufacturer: IXYS
• MountingType: Chassis
• Package  /Case: SOT227B (Minibloc)
• Technology: Silicon Carbide (SiC)
• FetType: N-CH
• Current(25°C):
• Voltage: 1.2kV
• RdsOn:
• PowerDissipation:
• Trr:
• Configuration:
• Applications:
• OperatingTemperature:
• Rohs: ROHS
• Packaging: TUBE

---

You can click for product datasheet.