IXFN20N120 MOSFET MOD.20A 1200V N-CH SOT227B HIPERFET CHASSIS

IXFN20N120 MOSFET MOD.20A 1200V N-CH SOT227B HIPERFET CHASSIS Description

IXFN20N120 MOSFET MOD.20A 1200V N-CH SOT227B HIPERFET CHASSIS The IXFN20N120, manufactured by LITTELFUSE, is a high-performance module MOSFET designed for mosfet mod.20a 1200v n-ch sot227b hiperfet chassis. It provides excellent performance and reliability for high-power applications. The MOSFET supports a current rating of 20A and a voltage rating of 1.2kV, with a low on-resistance of 750m Ohms ensuring efficient operation. It can handle a power dissipation of up to 780W, making it ideal for demanding environments. The reverse recovery time is 300ns, allowing for fast switching. Operating within a temperature range of -55°C~+150°C, it offers robust performance across various conditions. As a rohs-compliant product, it meets strict environmental standards. Packaged in tube format, it ensures secure handling and storage. With its advanced features and durable design, the IXFN20N120 is an excellent choice for professionals seeking high-quality module MOSFET solutions.

IXFN20N120 MOSFET MOD.20A 1200V N-CH SOT227B HIPERFET CHASSIS Technical Specifications

• Manufacturer: LITTELFUSE
• MountingType: Chassis
• Package  /Case: SOT227B (Minibloc)
• Technology: HiPerFET
• FetType: N-CH
• Current(25°C): 20A
• Voltage: 1.2kV
• RdsOn: 750m Ohms
• PowerDissipation: 780W
• Trr: 300ns
• Configuration: Single
• Applications:
• OperatingTemperature: -55°C~+150°C
• Rohs: ROHS
• Packaging: TUBE

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