IXFN110N85X MOSFET MOD.110A 850V N-CH SOT227B ULTRA JUNCTION

IXFN110N85X MOSFET MOD.110A 850V N-CH SOT227B ULTRA JUNCTION Description

IXFN110N85X MOSFET MOD.110A 850V N-CH SOT227B ULTRA JUNCTION The IXFN110N85X, manufactured by IXYS, is a high-performance module MOSFET designed for mosfet mod.110a 850v n-ch sot227b ultra junction. It provides excellent performance and reliability for high-power applications. The MOSFET supports a current rating of 110A and a voltage rating of 850V, with a low on-resistance of 33m Ohms ensuring efficient operation. It can handle a power dissipation of up to 1.17kW, making it ideal for demanding environments. The reverse recovery time is 205ns, allowing for fast switching. Operating within a temperature range of -55°C~+150°C, it offers robust performance across various conditions. As a rohs-compliant product, it meets strict environmental standards. Packaged in tube format, it ensures secure handling and storage. With its advanced features and durable design, the IXFN110N85X is an excellent choice for professionals seeking high-quality module MOSFET solutions.

IXFN110N85X MOSFET MOD.110A 850V N-CH SOT227B ULTRA JUNCTION Technical Specifications

• Manufacturer: IXYS
• MountingType: Chassis
• Package  /Case: SOT227B (Minibloc)
• Technology: HiPerFET
• FetType: N-CH
• Current(25°C): 110A
• Voltage: 850V
• RdsOn: 33m Ohms
• PowerDissipation: 1.17kW
• Trr: 205ns
• Configuration: Single
• Applications:
• OperatingTemperature: -55°C~+150°C
• Rohs: ROHS
• Packaging: TUBE

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