IXDN602SIA IC-602 DRIVER MOSFET DUAL LOW SIDE SOIC8

IXDN602SIA IC-602 DRIVER MOSFET DUAL LOW SIDE SOIC8 Description

IXDN602SIA IC-602 DRIVER MOSFET DUAL LOW SIDE SOIC8 The product IXDN602SIA (IC-602 DRIVER MOSFET DUAL LOW SIDE SOIC8) is a high-performance power driver IC designed for advanced control applications. Supporting a supply voltage range of ROHS, it ensures reliable operation under diverse conditions. This IC features IXYS CLARE technology, providing efficient drive capabilities for 2A, 2A devices. With an output current rating of -55°C~+150°C and a rise/fall time of 4.5V to 35V, it offers exceptional speed and responsiveness. The device is mounted using Non-Inverting, IGBT, N-Channel, P-Channel MOSFET and is packaged in a 7.5ns, 6.5ns format, allowing for seamless integration into compact designs. Operating within a temperature range of TUBE, it is well-suited for robust environments. Manufactured by SOIC8, this IC is compliant with RoHS standards, making it an environmentally friendly and reliable choice for modern electronic systems.

IXDN602SIA IC-602 DRIVER MOSFET DUAL LOW SIDE SOIC8 Technical Specifications

• Manufacturer: IXYS CLARE
• Time: 2-Ampere Dual Low-Side Ultrafast Mosfet Drivers
• OperatingTemperature: TUBE
• Features: SMT
• DriverType: SOIC8
• MountingType: Non-Inverting, IGBT, N-Channel, P-Channel MOSFET
• Package: 7.5ns, 6.5ns
• (Motor): 2A, 2A
• Rise: 4.5V to 35V
• OutputCurrent: -55°C~+150°C
• SupplyVoltage: ROHS

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